moc8111/ moc8112 document number 83661 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179009 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, phototransisto r output, no base connection features ? no base terminal connection for improved com- mon mode interface immunity long term stability industry standard dual-in-line package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 description the moc8111/ moc8112 is an optocoupler consist- ing of a gallium arsenide in frared emitting diode opti- cally coupled to a silicon planar phot otransistor detector in a plastic plug-in dip 6 pin package. the coupling device is suitab le for signal transmission between two electrically separated circuits. the potential difference between the circuits to be coupled should not exceed the maximum permissible refer- ence voltages. in contrast to the il1, the base terminal is not con- nected, resulting in substantially improved common- mode interference immunity. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks moc8111 ctr > 20 %, dip-6 moc8112 ctr > 50 %, dip-6 moc8111-x006 ctr > 20 %, dip-6 400 mil (option 6) moc8111-x007 ctr > 20 %, smd-6 (option 7) MOC8112-X006 ctr > 50 %, dip-6 400 mil (option 6) moc8112-x007 ctr > 50 %, smd-6 (option 7) moc8112-x009 ctr > 50 %, smd-6 (option 9) parameter test condition symbol value unit dc forward current i f 60 ma reverse voltage v r 6.0 v surge forward current t 10 si fsm 2.5 a total power dissipation p diss 100 mw
www.vishay.com 2 document number 83661 rev. 1.4, 26-oct-04 moc8111/ moc8112 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit emitter-collector breakdown voltage bv eco 30 v collector current i c 50 ma t 10 si c 150 ma total power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage between emitter and detector refer to standard climate 23/50 din 50014 v iso 5300 v rms creepage 7mm clearance 7mm isolation thickness between emitter and detector 4mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 150 c soldering temperature max. 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.15 1.5 v reverse leakage current v r = 6.0 v i r 0.05 10 a junction capacitance v = 0 v, f = 1.0 mhz c j 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 abv ceo 30 v collector-emitter leakage current v ce = 10 v i ceo 1.0 50 na emitter-collector breakdown voltage i e = 10 abv eco 7.0 v collector-emitter capacitance v ce = 0 v, f = 1.0 mhz c ce 7.0 pf
moc8111/ moc8112 document number 83661 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics parameter test condition symbol min ty p. max unit collector saturation voltage i c = 500 a, i f = 10 ma v cesat 0.15 0.4 v parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 10 v moc8111 ctr 20 % moc8112 ctr 50 % parameter test condition symbol min ty p. max unit turn on time v cc = 10 v, r l = 100 ? i c = 2.0 ma, see figure 1 t on 7.5 20 s turn off time v cc = 10 v, r l = 100 ? i c = 2.0 ma, see figure 1 t off 5.7 20 s figure 1. switching times imoc8111_01 test circuit 10% 90% input pulse output pulse t on t off t r t f waveforms v cc v out =10v i c r l =100 ? input input current adjusted to achieve i c =2ma
www.vishay.com 4 document number 83661 rev. 1.4, 26-oct-04 moc8111/ moc8112 vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
moc8111/ moc8112 document number 83661 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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